Category:1981 births
Category:Living people
Category:American businesspeople
Category:University of Arkansas at Little Rock alumni
Category:People from Little Rock, Arkansas
Category:American computer businesspeopleElectronic packages such as semiconductor devices or packaged integrated circuit (IC) chips may be subjected to extreme temperatures, heat flux, and mechanical stress during operation. In the past, the industry has attempted to make IC devices, such as very large scale integrated circuits (VLSI), more reliable in use by installing a protective metal film, for example, an aluminum film, directly over the surface of the IC device, such as an IC chip, and then depositing a silicon nitride film over the aluminum film.
Generally, the aluminum film is deposited by evaporation (e.g., at a deposition rate of approximately 0.01.ANG./min), sputtering (e.g., at a deposition rate of approximately 0.02.ANG./min), or sputter coating (e.g., at a deposition rate of approximately 0.1.ANG./min) so as to cover the IC device to a desired thickness (e.g., 5.mu.m). However, because the sputtering rate is very slow, the process for depositing a thin film in the thickness required for protecting the IC device is very time consuming.
To this end, a rapid thermal annealing process has been used. For example, a thin film of silicon nitride, which is typically only 1-2.mu.m thick, can be deposited onto a substrate of Al or other heat-sensitive material in a very short period of time (e.g., less than one minute), as compared with the conventional evaporation, sputtering, and sputter coating process. Thus, the silicon nitride film may be annealed in a short period of time, such as on the order of 100-1000 seconds, at a high temperature of about 1100.degree.-1400.degree. C.
After the silicon nitride film is deposited, the film must be annealed to repair defects in the film, e.g., the grain boundaries in the film. However, when the film is annealed at a high temperature for a long period of time, crystallization of the silicon nitride film occurs. This crystallization of the film reduces the effectiveness of the silicon nitride film as a protection layer for the IC device.Application of the WHO-d 01e38acffe
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